Image sensors including conductive pixel separation structures

ABSTRACT

An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

NOTICE

More than one reissue application has been filed for the reissue of U.S.Pat. No. 9,780,142. The reissue applications are (1) the presentapplication, (2) U.S. patent application Ser. No. 16/592,515, filed onOct. 3, 2019 based on which the present application is a continuationreissue.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is an application for reissue of U.S. Pat. No.9,780,142, issued on Oct. 3, 2017, and is a continuation of U.S. patentapplication Ser. No. 16/592,515 filed Oct. 3, 2019, which is also anapplication for reissue of U.S. Pat. No. 9,780,142, issued on Oct. 3,2017 from U.S. patent application Ser. No. 15/630,498 filed on Jun. 22,2017, which is a continuation of U.S. patent application Ser. No.15/349,227, filed Nov. 11, 2016, (now U.S. Pat. No. 9,754,994), which isa continuation of U.S. patent application Ser. No. 14/191,670, filedFeb. 27, 2014 (now U.S. Pat. No. 9,524,995), and claims priority under35 U.S.C. § 119 to Korean Patent Application No. 10-2013-0022858, filedMar. 4, 2013, in the Korean Intellectual Property Office, the entirecontents of which are hereby incorporated herein by reference in theirentireties.

BACKGROUND

Example embodiments of the inventive concept relate to image sensors andmethods of forming the same.

Image sensors are semiconductor devices capable of converting electricsignals into optical images. Image sensors may be classified intovarious types, including charge coupled device (CCD) type andcomplementary metal oxide semiconductor (CMOS) type. A CMOS image sensor(CIS) may include pixels arranged in two dimensions. Each of the pixelsmay include a photodiode (PD), which converts incident light intoelectric signal.

As semiconductor devices become more highly integrated, image sensorsmay likewise become highly integrated. Accordingly, the correspondingpixels may be scaled down, such that cross talk may increasingly occurbetween pixels.

SUMMARY

Example embodiments of the inventive concept provide highly-integratedimage sensors capable of improving dark current properties and methodsof fabricating the same.

According to example embodiments of the inventive concepts, an imagesensor includes a substrate having adjacent pixel regions comprisingrespective photodiode regions therein, and a pixel separation portioncomprising trench extending into the substrate between the adjacentpixel regions. The trench includes a conductive common bias line thereinand an insulating device isolation layer between the common bias lineand surfaces of the trench. A conductive interconnection is coupled tothe common bias line and is configured to provide a voltage thereto.

In example embodiments, the trench including the common bias linetherein may define a grid including the pixel regions therebetween inplan view.

In example embodiments, the trench including the common bias linetherein may not extend completely through the substrate. The pixelseparation portion may further include a channel stop region between theinsulating device isolation layer in the trench and a surface of thesubstrate. The channel stop region has a conductivity type opposite tothat of the respective photodiode regions.

In example embodiments, the surface of the substrate may be alight-receiving surface adjacent the respective photodiode regions. Thechannel stop region may continuously extend from the insulating deviceisolation layer in the trench to the surface of the substrate.

In example embodiments, the trench may have differing depths such thatthe common bias line therein has a non-planar surface. A distance fromthe surface of the substrate to the insulating device isolation layer inthe trench may be greater in portions of the trench separating two ofthe adjacent pixel regions than in portions of the trench defining anintersection between four of the adjacent pixel regions.

In example embodiments, the surface of the substrate may be opposite alight-receiving surface thereof.

In example embodiments, the pixel separation portion may further includea shallow trench isolation region between the channel stop region andthe surface of the substrate. The channel stop region may continuouslyextend from the insulating device isolation layer in the trench to theshallow trench isolation region. A depth of the shallow trench isolationregion may be less than that of the insulating device isolation region.

According to further example embodiments of the inventive concepts, animage sensor may include a substrate, in which a plurality of pixelregions are provided and which has a first surface and a second surfacefacing or opposite each other, a photoelectric conversion part formed ineach of the pixel regions of the substrate, a gate electrode provided onthe photoelectric conversion part, and a pixel separation portionprovided in the substrate to separate the pixel regions from each other.The pixel separation portion may include a deep device isolation layerand a common bias line provided in the deep device isolation layer, andthe common bias line may be configured to be applied with a negativevoltage. Here, light may be incident into the image sensor through thesecond surface.

In example embodiments, in plan view, the common bias line may have amesh shape.

In example embodiments, the common bias line may have a curved top orbottom surface.

In example embodiments, the common bias line may be electricallyisolated from the substrate.

In example embodiments, the common bias line may have a bottom surfacepositioned adjacent to the first surface and electrically connected toan external-voltage-applying wire. Alternatively, the common bias linemay have a top surface positioned adjacent to the second surface andelectrically connected to an external-voltage-applying wire.

In example embodiments, the substrate may further include an opticalblack region provided spaced apart from the pixel regions, and the imagesensor may further include an optical black pattern provided on theoptical black region. The optical black pattern and theexternal-voltage-applying wire include the same material.

In example embodiments, the substrate may further include a pad regionprovided spaced apart from the pixel region, and the image sensor mayfurther include a through via provided through the pad region. Thethrough via and the external-voltage-applying wire include the samematerial.

In example embodiments, the pixel separation portion may further includea channel-stop region in contact with the deep device isolation layer.

In example embodiments, the image sensor may further include a shallowdevice isolation layer that is provided in contact with the firstsurface and spaced apart from the deep device isolation layer. Theshallow device isolation layer may have a depth smaller than that of thedeep device isolation layer. The channel-stop region may be providedbetween the deep device isolation layer and the shallow device isolationlayer.

According to example embodiments of the inventive concepts, a method offabricating an image sensor may include forming a pixel separationportion in a substrate to define pixel regions. The substrate may have afirst surface and a second surface facing each other. Thereafter, aphotoelectric conversion part and a gate electrode may be formed in oron each of the pixel regions. The pixel separation portion may be formedto include a deep device isolation layer and a common bias line that isprovided in the deep device isolation layer and is applied with anegative voltage. Here, light may be incident into the image sensorthrough the second surface.

In example embodiments, the forming of the pixel separation portion mayinclude etching a portion of the substrate adjacent to the first surfaceto form a deep trench, forming the deep device isolation layer to coverconformally side and bottom surface of the deep trench, and forming thecommon bias line to fill the deep trench.

In example embodiments, the forming of the pixel separation portion mayinclude etching a portion of the substrate adjacent to the secondsurface to form a deep trench, forming the deep device isolation layerto cover conformally side and bottom surface of the deep trench, andforming the common bias line to fill the deep trench.

In example embodiments, the substrate may further include an opticalblack region spaced apart from the pixel regions. In this case, themethod may further include forming an insulating layer to cover thesecond surface, and forming an optical black pattern in the insulatinglayer on the optical black region and an external-voltage-applying wireconnected to the common bias line. The optical black pattern and theexternal-voltage-applying wire may be formed using the same process.

In example embodiments, the substrate may further include a pad regionspaced apart from the pixel regions. In this case, the method mayfurther include forming an insulating layer to cover the second surface,and forming a through via and an external-voltage-applying wire. Thethrough via may be formed to penetrate the insulating layer and the padregion of the substrate, and the external-voltage-applying wire may beconnected to the common bias line. The through via and theexternal-voltage-applying wire may be formed using the same process.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments will be more clearly understood from the followingbrief description taken in conjunction with the accompanying drawings.The accompanying drawings represent non-limiting, example embodiments asdescribed herein.

FIG. 1 is a circuit diagram of an image sensor according to exampleembodiments of the inventive concept

FIG. 2 is a layout illustrating an image sensor according to exampleembodiments of the inventive concept.

FIGS. 3A and 3B are sectional views taken along lines A-A′ and B-B′,respectively, of FIG. 2 .

FIGS. 4A through 9A are sectional views taken parallel to the line A-A′of FIG. 2 to illustrate a process of fabricating the image sensor ofFIG. 2 .

FIGS. 4B through 9B are sectional views taken parallel to the line B-B′of FIG. 2 to illustrate a process of fabricating the image sensor ofFIG. 2 .

FIG. 10 is a layout illustrating an image sensor according to otherexample embodiments of the inventive concept.

FIG. 11 is a sectional view taken along a line C-C′ of FIG. 10 toillustrate the image sensor according to other example embodiments ofthe inventive concept.

FIGS. 12 through 17 are sectional views illustrating a process offabricating the image sensor of FIG. 11 .

FIG. 18 is a sectional view taken along a line C-C′ of FIG. 10 toillustrate an image sensor according to still other example embodimentsof the inventive concept.

FIG. 19 is a block diagram illustrating an electronic device includingan image sensor, according to example embodiments of the inventiveconcept.

FIGS. 20 through 24 show examples of multimedia devices, to which imagesensors according to example embodiments of the inventive concept can beprovided.

It should be noted that these figures are intended to illustrate thegeneral characteristics of methods, structure and/or materials utilizedin certain example embodiments and to supplement the written descriptionprovided below. These drawings are not, however, to scale and may notprecisely reflect the precise structural or performance characteristicsof any given embodiment, and should not be interpreted as defining orlimiting the range of values or properties encompassed by exampleembodiments. For example, the relative thicknesses and positioning ofmolecules, layers, regions and/or structural elements may be reduced orexaggerated for clarity. The use of similar or identical referencenumbers in the various drawings is intended to indicate the presence ofa similar or identical element or feature.

DETAILED DESCRIPTION

Example embodiments of the inventive concepts will now be described morefully with reference to the accompanying drawings, in which exampleembodiments are shown. Example embodiments of the inventive conceptsmay, however, be embodied in many different forms and should not beconstrued as being limited to the embodiments set forth herein; rather,these embodiments are provided so that this disclosure will be thoroughand complete, and will fully convey the concept of example embodimentsto those of ordinary skill in the art. In the drawings, the thicknessesof layers and regions are exaggerated for clarity. Like referencenumerals in the drawings denote like elements, and thus theirdescription will be omitted. As used herein the term “and/or” includesany and all combinations of one or more of the associated listed items.

It will be understood that when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present. Other words used to describe therelationship between elements or layers should be interpreted in a likefashion (e.g., “between” versus “directly between,” “adjacent” versus“directly adjacent,” “on” versus “directly on”).

It will be understood that, although the terms “first”, “second”, etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. These terms areonly used to distinguish one element, component, region, layer orsection from another element, component, region, layer or section. Thus,a first element, component, region, layer or section discussed belowcould be termed a second element, component, region, layer or sectionwithout departing from the teachings of example embodiments.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the exemplary term “below” can encompass both anorientation of above and below. The device may be otherwise oriented(rotated 90 degrees or at other orientations) and the spatially relativedescriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises”, “comprising”, “includes” and/or “including,” if usedherein, specify the presence of stated features, integers, steps,operations, elements and/or components, but do not preclude the presenceor addition of one or more other features, integers, steps, operations,elements, components and/or groups thereof.

Example embodiments of the inventive concepts are described herein withreference to cross-sectional illustrations that are schematicillustrations of idealized embodiments (and intermediate structures) ofexample embodiments. As such, variations from the shapes of theillustrations as a result, for example, of manufacturing techniquesand/or tolerances, are to be expected. Thus, example embodiments of theinventive concepts should not be construed as limited to the particularshapes of regions illustrated herein but are to include deviations inshapes that result, for example, from manufacturing. For example, animplanted region illustrated as a rectangle may have rounded or curvedfeatures and/or a gradient of implant concentration at its edges ratherthan a binary change from implanted to non-implanted region. Likewise, aburied region formed by implantation may result in some implantation inthe region between the buried region and the surface through which theimplantation takes place. Thus, the regions illustrated in the figuresare schematic in nature and their shapes are not intended to illustratethe actual shape of a region of a device and are not intended to limitthe scope of example embodiments.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which example embodiments of theinventive concepts belong. It will be further understood that terms,such as those defined in commonly-used dictionaries, should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and will not be interpreted in anidealized or overly formal sense unless expressly so defined herein.

FIG. 1 is a circuit diagram of an image sensor according to exampleembodiments of the inventive concept.

Referring to FIG. 1 , the image sensor may include a plurality of unitpixels, each of which includes a photoelectric conversion region PD, atransfer transistor Tx, a source follower transistor Sx, a resettransistor Rx, and a selection transistor Ax. The transfer transistorTx, the source follower transistor Sx, the reset transistor Rx, and theselection transistor Ax may include a transfer gate TG, a sourcefollower gate SF, a reset gate RG, and a selection gate SEL,respectively. A photoelectric conversion portion may be provided in thephotoelectric conversion region PD. The photoelectric conversion portionmay be a photodiode including an n-type impurity region and a p-typeimpurity region. The transfer transistor Tx may include a drain regionserving as a floating diffusion region FD. The floating diffusion regionFD may also serve as a source region of the reset transistor Rx. Thefloating diffusion region FD may be electrically connected to the sourcefollower gate SF of the source follower transistor Sx. The sourcefollower transistor Sx may be connected to the selection transistor Ax.The reset transistor Rx, the source follower transistor Sx, and theselection transistor Ax may be shared by adjacent pixels, and this makesit possible to increase an integration density of the image sensor.

Hereinafter, an operation of the image sensor will be described withreference to FIG. 1 . In particular, when in a light-blocking state, apower voltage VDD may be applied to a drain region of the resettransistor Rx and a drain region of the source follower transistor Sx toturn on the reset transistor Rx and discharge electric charges from thefloating diffusion region FD. Thereafter, if the reset transistor Rx isturned-off and external light is incident into the photoelectricconversion region PD, electron-hole pairs may be generated in thephotoelectric conversion region PD. Holes may be moved toward the p-typedoped region, and electrons may be moved toward and accumulated in then-type doped region. If the transfer transistor Tx is turned on, theelectric charges (e.g., electrons) may be transferred to and accumulatedin the floating diffusion region FD. A change in amount of theaccumulated charges may lead to a change in gate bias of the sourcefollower transistor Sx, and this may lead to a change in sourcepotential of the source follower transistor Sx. Accordingly, if theselection transistor Ax is turned on, an amount of the charges may betransmitted or read out as a signal through a column line.

FIG. 2 is a layout illustrating an image sensor according to exampleembodiments of the inventive concept, FIGS. 3A and 3B are sectionalviews taken along lines A-A′ and B-B′, respectively, of FIG. 2 .

Referring to FIGS. 1, 2, 3A and 3B, a substrate 2 may be provided toinclude unit pixel regions UP. The substrate 2 may be a silicon wafer, asilicon-on-insulator (SOI) substrate, or a substrate including asemiconductor epitaxial layer. The substrate 2 may include a firstsurface 2a and a second surface 2b opposite each other. The secondsurface 2b may be arranged or configured in the image sensor such thatlight may be incident thereon, and is also referred to herein as alight-receiving surface 2b.

A pixel separation portion 12 may be provided in the substrate 2 toseparate the unit pixel regions UP from each other. In plan view, thepixel separation portion 12 may be shaped like a mesh or grid. Inexample embodiments, the pixel separation portion 12 may have a heightthat is substantially equivalent to a thickness of the substrate 2. Thepixel separation portion 12 may be formed through the substrate 2 toconnect or otherwise extend between the first and second surfaces 2a and2b. The pixel separation portion 12 may include an insulating deepdevice isolation layer 11 and a conductive common bias line 13 therein.The deep device isolation layer 11 and the common bias line 13 may be incontact with each other. The pixel separation portion 12 may furtherinclude a channel-stop region 10 that is in contact with the deep deviceisolation layer 11. The deep device isolation layer 11 may be formed ofan insulating material, whose refractive index is different from that ofthe substrate 2. For example, the deep device isolation layer DTI may beformed of at least one of a silicon oxide layer, a silicon nitridelayer, or a silicon oxynitride layer. In the present embodiment, thedeep device isolation layer 11 may be provided in contact with the firstsurface 2a and spaced apart from the second surface 2b. A top surface ofthe deep device isolation layer 11 adjacent to the second surface 2b mayhave a curved or uneven structure. A distance from the second surface 2bto a top surface 6 of the deep device isolation layer 11 may be a firstdistance D1 between two adjacent pixel regions UP, and a second distanceD2 (which is less than or equal to D1) at an intersection of fouradjacent pixel regions UP.

The common bias line 13 may be formed of at least one of an undoped ordoped polysilicon layer, a metal silicide layer, or a metal-containinglayer. Since the deep device isolation layer 11 has the curved or uneventop surface, the common bias line 13 may have a curved or uneven topsurface. A line-shaped edge or linear portion 13a may be provided at anend portion of the common bias line 13. The line-shaped edge 13a may beelectrically connected to an edge contact 130 and anexternal-voltage-applying wire 132 that are provided adjacent to thefirst surface 2a. The common bias line 13 may be applied with a negativevoltage via the external-voltage-applying wire 132. The negative voltageapplied to the common bias line 13 may fix or attract holes to a surfaceof the deep device isolation layer 11, and this makes it possible toimprove a dark current property of the image sensor.

The channel-stop region 10 may be in contact with the second surface 2b.For example, the photoelectric conversion part PD may be doped withn-type impurities, and the channel-stop region 10 may be doped withp-type impurities. Since the pixel separation portion 12 is formed topenetrate and extend through the substrate 2 from the first surface 2ato the second surface 2b, each of the unit pixel regions UP can beelectrically or optically isolated from the others, and thus, it ispossible to reduce or prevent cross talk between the unit pixel regionsUP from occurring by a slantingly incident light (that is, in responseto incident light at oblique angles relative to the light-receivingsurface 2b). Further, the photoelectric conversion part PD may be formedto be in contact with the sidewall of the pixel separation portion 12and may have the same area as the unit pixel region UP, which can allowthe image sensor to have an increased light-receiving area and/or anincreased fill factor.

A plurality of transistors Tx1, Tx2, Rx, Dx, and Sx and a plurality ofwires may be provided on the first surface 2a. A well region PW may beprovided on the photoelectric conversion part PD. In exampleembodiments, the well region PW may be doped with p-type impurities.Shallow device isolation layers STI may be provided on the well regionPW to define active regions AR of the transistors Tx1, Tx2, Rx, Dx, andSx. The shallow device isolation layer STI may be formed to have a depthsmaller than the deep device isolation layer 11. In example embodiments,the shallow device isolation layer STI and the deep device isolationlayer 11 may be connected to each other, thereby constituting ordefining a single body or region. For example, as shown in FIG. 3A, theshallow device isolation layer STI and the deep device isolation layer11 may be formed between the unit pixel regions UP to have an inverted‘T’ shape.

In each of the unit pixel regions UP, the transfer gate TG serving asthe gate electrode of the transfer transistor Tx1 may be provided on thefirst surface 2a of the substrate 2. A gate insulating layer 24 may beinterposed between the transfer gate TG and the substrate 2. A topsurface of the transfer gate TG may be higher than the first surface 2aof the substrate 2, and a bottom surface thereof may be positioned inthe substrate 2 or the well PW. For example, the transfer gate TG mayinclude a protruding portion 21 positioned on the substrate 2 and aburied portion 22 inserted into the substrate 2. The floating diffusionregion FD may be formed in a portion of the substrate 2 between an uppersidewall of the buried portion 22 and the shallow device isolation layerSTI. The floating diffusion region FD may be doped with impuritieshaving a different conductivity type from that of the well region PW.For example, the floating diffusion region FD may be doped with n-typeimpurities.

A doped ground region 26 may be formed in a portion of the active regionAR, which is spaced apart from the transfer gate TG by the shallowdevice isolation layer STI. The doped ground region 26 may be doped withimpurities having the same conductivity type as that of the well regionPW. For example, the doped ground region 26 may be doped with p-typeimpurities. In example embodiments, an impurity concentration of thedoped ground region 26 may be higher than that of the well region PW.The floating diffusion region FD and the doped ground region 26 may beelectrically connected to at least one of contact plugs and wires 30that are disposed on the first surface 2a. The first surface 2a may becovered with a plurality of interlayered insulating layers 32.

An anti-reflecting layer 38 may be formed to cover wholly the secondsurface 2b. In each of the unit pixel regions UP, a color filter 42 anda micro-lens 44 may be provided on the anti-reflecting layer 38. Thecolor filter 42 may be a portion of a color filter array including aplurality of color filters arranged in the form of matrix. In exampleembodiments, the color filter array may be provided to form the Bayerpattern including a red filter, a green filter, and a blue filter;however, embodiments of the present inventive concept are not limited toparticular filter colors. For example, in other embodiments, the colorfilter array may be configured to include a yellow filter, a magentafilter and a cyan filter. In certain embodiments, the color filter arraymay further include a white filter.

FIGS. 4A through 9A are sectional views taken parallel to the line A-A′of FIG. 2 to illustrate a process of fabricating the image sensor ofFIG. 2 , and FIGS. 4B through 9B are sectional views taken parallel tothe line B-B′ of FIG. 2 to illustrate a process of fabricating the imagesensor of FIG. 2 .

Referring to FIGS. 4A and 4B, the substrate 2 including first and secondopposing surfaces 2a and 2b is prepared. The substrate 2 may be asilicon wafer, a silicon-on-insulator (SOI) substrate, and/or asubstrate including a semiconductor epitaxial layer. The substrate 2 maybe doped with, for example p-type impurities. An ion implantationprocess may be performed to form the photoelectric conversion part PDand the well region PW in the substrate 2. The photoelectric conversionpart PD may be doped with, for example, n-type impurities, and the wellregion PW may be doped with, for example, p-type impurities. Thephotoelectric conversion part PD and/or the well region PW may be formedafter the formation of the pixel separation portion 12 is complete. Afirst mask pattern 3 may be formed on the first surface 2a. Thesubstrate 2 adjacent to the first surface 2a may be etched using thefirst mask pattern 3 as an etch mask, thereby forming the first trench 4with a first depth D3.

Referring to FIGS. 5A and 5B, an insulating layer is formed to fill thefirst trench 4 and is planarized to expose the first surface 2a and theshallow device isolation layer STI.

Referring to FIGS. 6A and 6B, a second mask pattern 5 may be formed tocover the first surface 1a and define the pixel regions UP. The shallowdevice isolation layer STI and the substrate 2 may be etched using thesecond mask pattern 5 as an etch mask to form the second trench 6 havinga second depth D4. The second trench 6 may be formed to include aplurality of grooves intersecting to each other, thereby having a grid-or mesh-like shape in plan view. Here, an amount of the substrate 2 thatis etched is greater at an intersection between four adjacent pixelregions UP than between two adjacent pixel regions UP. That is, the etchamount of the substrate 2 may be larger at the intersection of thegrooves, when compared with at each of the grooves. Accordingly, at thisstage, the second trench 6 may have a third depth D5 that is equivalentto or greater than the second depth D4. Further, the second trench 6 mayhave a curved or uneven bottom surface. For example, a distance from thesecond surface 2b to the bottom surface of the second trench 6 may be afirst height H1 between two adjacent unit pixel regions UP and a secondheight H2, which is equivalent to or smaller than the first height H1,between four adjacent unit pixel regions UP. An ion implantation processP1 may be performed to the substrate 2 covered with the second maskpattern 5, and thus, the channel-stop region 10 may be formed inportions of the substrate 2 exposed by the second trench 6. Thechannel-stop region 10 may be doped with, for example, p-typeimpurities.

Referring to FIGS. 7A and 7B, the second mask pattern 5 may be removed,and then, the insulating layer 11 may be conformally deposited to coverthe side and bottom surfaces of the second trench 6. The conductivelayer 13 may be deposited to fill the second trench 6. A planarizationprocess may be performed to expose the first surface 2a, and thus, thedeep device isolation layer 11, the common bias line 13, and theline-shaped edge 13a may be formed in the second trench 6. As a result,the pixel separation portion 12 including the deep device isolationlayer 11, the channel-stop region 10, and the common bias line 13 may beformed to separate the unit pixel regions UP from each other.

Referring to FIGS. 8A and 8B, the gate insulating layer 24 and thetransfer gate TG may be formed on the first surface 2a, and the floatingdiffusion region FD and the doped ground region 26 may be formed. Thecontact plugs and wires 30 and the interlayered insulating layers 32 maybe formed on the first surface 2a. In example embodiments, the edgecontact 130 and the external-voltage-applying wire 132, which areconnected to the line-shaped edge 13a, may be formed using the processof forming the contact plugs and wires 30.

Referring to FIGS. 8A, 8B, 9A, and 9B, the substrate 2 may be invertedor rotated in such a way that the second surface 2b faces upward. Agrinding or CMP process may be performed to remove a portion of thesubstrate 2 adjacent to the second surface 2b by a first thickness T1and thereby to expose the channel-stop region 10. Meanwhile, a variationin depth of the bottom surface of the deep device isolation layer 11 maybe determined by that of the second trench 6. Thus, if the pixelseparation portion 12 included only the deep device isolation layer 11,the polished surface of the substrate 2 (after the grinding or CMPprocess) may have a deteriorated surface flatness or uniformity, owingat least to the variation in depth of the bottom surface of the deepdevice isolation layer 11. Further, during the grinding or CMP process,a stress may be exerted to an interface between the substrate 2 and thedeep device isolation layer 11 to create many defects. The deteriorationin surface uniformity or the increase of defects may result in increasedvariation in color between pixels or a deteriorated dark currentproperty. In contrast, according to example embodiments of the inventiveconcept, the grinding or CMP process may be perform to expose thechannel-stop region 10, not the deep device isolation layer 11, andthus, it is possible to improve the surface uniformity and reduce thenumber of defects in the grinding or CMP process. As a result, it ispossible to realize the image sensor with an improved dark currentproperty and a high image quality.

Thereafter, as shown in FIGS. 3A and 3B, the anti-reflecting layer 38, afirst insulating layer 39, a second insulating layer 40, the colorfilter 42, and the micro-lens 44 may be formed on the second surface 2bof the substrate 2.

FIG. 10 is a layout illustrating an image sensor according to otherexample embodiments of the inventive concept. FIG. 11 is a sectionalview taken along a line C-C′ of FIG. 10 to illustrate the image sensoraccording to other example embodiments of the inventive concept.

Referring to FIGS. 10 and 11 , according to other example embodiments ofthe inventive concept, the image sensor may include the substrate 2 withthe pixel region PR, the optical black region OB, the pad region TR, andthe edge region ER. The unit pixel regions UP may be provided in thepixel region PR, and the optical black region OB and the pad region TRmay be provided spaced apart from the pixel region PR. The line-shapededge 13a may be provided in the edge region ER. The pixel separationportion 12 may include the deep device isolation layer 11, the commonbias line 13, the channel-stop region 10, and the shallow deviceisolation layer STI. In example embodiments, the deep device isolationlayer 11 may be provided in contact with the second surface 2b andspaced apart from the first surface 2a. The channel-stop region 10 maybe provided between the shallow device isolation layer STI and the deepdevice isolation layer 11. Each or at least one of the deep deviceisolation layer 11 and the common source line 13 may have a curved oruneven bottom surface. An optical black pattern 50 may be provided onthe optical black region OB. A through via 52 may be provided in the padregion TR to penetrate the first insulating layer 39, theanti-reflecting layer 38, and the substrate 2. An insulating spacer 46may be interposed between the through via 52 and the substrate 2. Asolder ball 54 may be attached to the through via 52. The edge contact130 and the external-voltage-applying wire 132 may be provided in thefirst insulating layer 39 of the edge region ER to be in contact withthe line-shaped edge 13a. The through via 52, the optical black pattern50, and the external-voltage-applying wire 132 may be formed of the samematerial (e.g., tungsten) in some embodiments.

The optical black pattern 50 may reduce or prevent light from beingincident on or into a reference pixel provided thereunder. Since thereference pixel is in the light-blocking state, an amount of electriccharges generated in the reference pixel (hereinafter, referred as to areference charge amount) can be used to compare an amount of electriccharges from the unit pixel regions UP (hereinafter, referred as to aunit charge amount), and to calculate a difference between the unit andreference charge amounts. This may make it possible to obtain moreaccurate signals from each unit pixel UP.

Except for the above described differences, the image sensor accordingto other example embodiments of the inventive concept may be configuredto have substantially similar features as those of thepreviously-described embodiments.

FIGS. 12 through 17 are sectional views illustrating a process offabricating the image sensor of FIG. 11 .

Referring to FIG. 12 , the first trench 4 may be formed, as shown inFIG. 4A, and then, the second mask pattern 5 may be formed to cover thefirst mask pattern 3 and define a region for the channel-stop region 10.The substrate 2 may be doped with impurities using the second maskpattern 5 as an ion injection mask to form the channel-stop region 10.The channel-stop region 10 may be doped with, for example, p-typeimpurities.

Referring to FIG. 13 , the first and second mask patterns 3 and 5 may beselectively removed to expose the first trench 4. An insulating layermay be deposited to fill the first trench 4, and then, the insulatinglayer may be etched to form the shallow device isolation layer STIhaving a flat or planar top surface.

Referring to FIG. 14 , as described with reference to FIG. 9A, the gateinsulating layer 24, the transfer gate TG, the floating diffusion regionFD, the doped ground region 26, the contact plugs and wires 30, and theinterlayered insulating layers 32 may be formed on or in the firstsurface 2a of the substrate 2. In contrast to FIG. 9A, the edge contact130 and the external-voltage-applying wire 132 may not be formed at thisstage.

Referring to FIG. 15 , the substrate 2 may be inverted or turned-over,and a grinding or CMP process may be performed to remove a portion ofthe substrate 2 adjacent to the second surface 2b by a predeterminedthickness. Here, the deep device isolation layer 11 may not be exposedduring the grinding or CMP process, and thus, it is possible to reduceor prevent a polished surface of the substrate from having a reduced orlowered flatness or uniformity and to suppress surface defects fromoccurring. A portion of the substrate 2 adjacent to the second surface2b may be etched to form the second trench 6 exposing the channel-stopregion 10. Thereafter, an insulating layer and a conductive layer may besequentially formed to fill the second trench 6, and may be planarizedto form the deep device isolation layer 11, the common bias line 13, andthe line-shaped edge 13a. Due to the presence of the channel-stop region10, it is possible to reduce a depth of the second trench 6, which maymake it possible to prevent or suppress an etch damage from occurring.

Referring to FIG. 16 , the anti-reflecting layer 38 and the firstinsulating layer 39 may be sequentially stacked on the second surface2b. The first insulating layer 39, the anti-reflecting layer 38, and thesubstrate 2 may be patterned to form a through-via hole 51a exposing thewire 30 on the pad region TR. The first insulating layer 39 may bepatterned to form a first recess region 51b on the optical black regionOB. The first insulating layer 39 and the anti-reflecting layer 38 maybe patterned to form a second recess region 51c on the edge region ER.

Referring to FIG. 17 , a conductive layer may be deposited andplanarized to form the through via 52, the optical black pattern 50, andthe edge contact and external-voltage-applying wire 130 and 132 fillingthe through-via hole 51a, the first recess region 51b, and the secondrecess region 51c, respectively.

Subsequent processes may be performed in the same or similar manner asthat described in example embodiments of the inventive concept.

FIG. 18 is a sectional view taken along a line C-C′ of FIG. 10 toillustrate an image sensor according to still other example embodimentsof the inventive concept.

Referring to FIG. 18 , structural features of the image sensorsaccording to the aforementioned embodiments may be combined to realizean image sensor according to still other example embodiments of theinventive concept. For example, according to still other exampleembodiments of the inventive concept, the image sensor may be configuredto include the pixel separation portion 12, whose structure is similarto that of FIGS. 3A and 3B, and the edge contact 130 and theexternal-voltage-applying wire 132, whose disposition is similar to thatof FIG. 11 .

FIG. 19 is a block diagram illustrating an electronic device having animage sensor, according to example embodiments of the inventive concept.The electronic device may be any of various types of devices, such as adigital camera or a mobile device, for example. Referring to FIG. 19 ,an illustrative digital camera system includes an image sensor 100, aprocessor 230, a memory 300, a display 410 and a bus 500. As shown inFIG. 19 , the image sensor 100 captures an external image under controlof the processor 230, and provides the corresponding image data to theprocessor 230 through the bus 500. The processor 230 may store the imagedata in the memory 300 through the bus 500. The processor 230 may alsooutput the image data stored in the memory 300, e.g., for display on thedisplay device 410.

FIGS. 20 through 24 show examples of multimedia devices, to which imagesensors according to example embodiments of the inventive concept can beapplied. Image sensors according to example embodiments of the inventiveconcept can be applied to a variety of multimedia devices with animaging function. For example, image sensors according to exampleembodiments of the inventive concept may be applied to a mobile phone ora smart phone 2000 as shown in FIG. 20 , to a tablet PC or a smarttablet PC 3000 as shown in FIG. 21 , to a laptop computer 4000 as shownin FIG. 22 , to a television set or a smart television set 5000 as shownin FIG. 23 , and/or to a digital camera or a digital camcorder 6000 asshown in FIG. 24 .

According to example embodiments of the inventive concept, the imagesensor may include a common bias line, to which a negative voltage canbe applied, and which is disposed in a deep device isolation layer.Accordingly, it may be possible to fix or otherwise attract holes in asidewall of deep device isolation layer and thereby improve a darkcurrent property of the image sensor.

While example embodiments of the inventive concepts have beenparticularly shown and described, it will be understood by one ofordinary skill in the art that variations in form and detail may be madetherein without departing from the spirit and scope of the attachedclaims.

What is claimed is:
 1. An image sensor, comprising: a substratecomprising a plurality of pixel regions, the substrate having a firstsurface and a second surface opposite the first surface, wherein thesecond surface is arranged to receive incident light; photoelectricconversion parts in the pixel regions of the substrate; gate electrodesand floating diffusion regions in the pixel regions of the substrate; apixel separation structure including a first isolation region and asecond isolation region in the substrate that separate the pixel regionsfrom each other, wherein the first isolation region includes aninsulating device isolation layer and a metal element, and the secondisolation region includes an impurity-doped region; and doped groundregions disposed between adjacent ones of the floating diffusionregions, wherein the first isolation region is in contact with thesecond surface and spaced apart from the first surface, and the secondisolation region is disposed between the first isolation region and thefirst surface.
 2. The image sensor of claim 1, wherein the secondisolation region is doped with an impurity type different from thephotoelectric conversion part.
 3. The image sensor of claim 1, whereinthe metal element include a metal-containing layer.
 4. The image sensorof claim 3, wherein the doped ground regions are doped with an impuritytype different from the floating diffusion regions.
 5. The image sensorof claim 1, further comprising a shallow device isolation layer incontact with the first surface and spaced apart from the first isolationregion, the shallow device isolation layer having a depth less than thatof the first isolation region.
 6. The image sensor of claim 1, whereinin plan view, the floating diffusion regions and the doped groundregions are arranged in a straight line.
 7. The image sensor of claim 1,wherein the gate electrode includes a protruding portion positioned onthe substrate and a buried portion inserted into the substrate.
 8. Theimage sensor of claim 6, wherein the substrate further comprises anoptical black region spaced apart from the pixel region, wherein theimage sensor further comprises an optical black pattern provided on theoptical black region.
 9. The image sensor of claim 6, wherein thesubstrate further comprises a pad region spaced apart from the pixelregion, wherein the image sensor further comprises a through viaprovided through the pad region.
 10. The image sensor of claim 1,wherein at least a portion of the photoelectric conversion part overlapsthe floating diffusion regions and the doped ground regions.
 11. Animage sensor, comprising: a substrate comprising a plurality of pixelregions, the substrate having a first surface and a second surfaceopposite the first surface, wherein the second surface is arranged toreceive incident light; photoelectric conversion parts in the pixelregions of the substrate; gate electrodes and floating diffusion regionsin the pixel regions of the substrate; a pixel separation structureincluding a first isolation region and a second isolation region in thesubstrate that separate the pixel regions from each other, wherein thefirst isolation region includes an insulating device isolation layer,and the second isolation region includes an impurity-doped region; anddoped ground regions disposed between adjacent ones of the floatingdiffusion regions, wherein the first isolation region is in contact withthe second surface and spaced apart from the first surface, and thesecond isolation region is disposed between the first isolation regionand the first surface, and wherein in plan view, the floating diffusionregions and the doped ground regions are arranged in a straight line.12. An image sensor, comprising: a substrate comprising a plurality ofpixel regions, the substrate having a first surface and a second surfaceopposite the first surface, wherein the second surface is arranged toreceive incident light; a photoelectric conversion part in each of theplurality of pixel regions of the substrate; a floating diffusion regionon the first surface of the substrate; a first pixel separationstructure including a first isolation region and a first p-type dopedregion in the substrate that separate the plurality of pixel regionsfrom each other, wherein the first isolation region includes a siliconoxide layer; and a second p-type doped region disposed on the firstsurface and adjacent to the floating diffusion region, wherein the firstisolation region is in contact with the second surface and spaced apartfrom the first surface, and the first p-type doped region is between thefirst isolation region and the first surface, and wherein a surface ofthe first isolation region facing the first surface has an unevenstructure.
 13. The image sensor of claim 12, wherein the second p-typedoped region is a doped ground region.
 14. The image sensor of claim 12,wherein the uneven structure is a curved structure.
 15. The image sensorof claim 14, wherein the second p-type doped region is electricallyconnected to a wire disposed on the first surface.
 16. The image sensorof claim 14, wherein the first isolation region further includes a metalcontaining layer.
 17. The image senor of claim 16, wherein the metalcontaining layer has an uneven or a curved surface that faces the firstsurface.
 18. The image sensor of claim 17, further comprising an opticalblack region adjacent to the plurality of pixel regions and a secondpixel separation structure in the optical black region, wherein thesecond pixel separation structure includes a second isolation region,and wherein the second isolation region is in contact with the secondsurface and spaced apart from the first surface.
 19. The image sensor ofclaim 18, further comprising an optical black pattern in the opticalblack region, wherein the optical black pattern is disposed on thesecond surface and includes tungsten.
 20. The image senor of claim 19,wherein a surface of the second isolation region facing the firstsurface has the uneven structure.
 21. An image sensor, comprising: asubstrate comprising a plurality of pixel regions and an optical blackpixel region adjacent to the plurality of pixel regions, the substratehaving a first surface and a second surface opposite the first surface,wherein the second surface is arranged to receive incident light; aphotoelectric conversion part in each of the plurality of pixel regionsof the substrate; a floating diffusion region on the first surface ofthe substrate; a first pixel separation structure including a firstisolation region and a first p-type doped region in the substratedisposed between the plurality of pixel regions, wherein the firstisolation region includes a silicon oxide layer; a second p-type dopedregion disposed on the first surface and adjacent to the floatingdiffusion region; and a second pixel separation structure including asecond isolation region and a third p-type doped region in thesubstrate, wherein the second pixel separation structure is disposed inthe optical black pixel region, wherein the first isolation region is incontact with the second surface and spaced apart from the first surface,and the first p-type doped region is disposed between the firstisolation region and the first surface, wherein the second isolationregion is in contact with the second surface and spaced apart from thefirst surface, and wherein a surface of the first isolation regionfacing the first surface has an uneven or a curved surface.
 22. Theimage sensor of claim 21, wherein the first p-type doped regionvertically extends from the first isolation region toward the firstsurface.
 23. The image sensor of claim 22, wherein the second p-typedoped region is electrically connected to a wire disposed on the firstsurface.
 24. The image sensor of claim 23, further comprising a fourthp-type doped region on the first surface, wherein a distance from thesecond surface to the fourth p-type doped region is closer than adistance from the second surface to the second p-type doped region. 25.The image sensor of claim 24, wherein a surface of the second isolationregion facing the first surface has an uneven structure.
 26. The imagesensor of claim 21, wherein the third p-type doped region verticallyextends from the second isolation region toward the first surface. 27.The image sensor of claim 26, further comprising a fourth p-type dopedregion on the first surface, wherein a distance from the second surfaceto the fourth p-type doped region is closer than a distance from thesecond surface to the second p-type doped region.
 28. An image sensor,comprising: a substrate comprising a plurality of pixel regions and anoptical black pixel region adjacent to the plurality of pixel regions,the substrate having a first surface and a second surface opposite thefirst surface, wherein the second surface is arranged to receiveincident light; a photoelectric conversion part in each of the pluralityof pixel regions of the substrate; a floating diffusion region on thefirst surface of the substrate; a first pixel separation structuredisposed between the plurality of pixel regions, wherein the first pixelseparation structure vertically extends from the second surface towardthe first surface; a second pixel separation structure in the opticalblack pixel region, wherein the second pixel separation structurevertically extends from the second surface toward the first surface; anda first p-type doped region disposed on the first surface and adjacentto the floating diffusion region, wherein the first pixel separationstructure includes a silicon oxide layer and a metal containing layer,wherein the first p-type doped region is electrically connected to awire disposed on the first surface, and wherein a distance from thesecond surface to a second p-type doped region is closer than a distancefrom the second surface to the first p-type doped region.
 29. The imagesensor of claim 28, further comprising an optical black pattern in theoptical black pixel region, wherein the optical black pattern isdisposed on the second surface and includes tungsten.
 30. The imagesensor of claim 29, wherein in a plan view, the floating diffusionregion and the first p-type doped region are arranged in a straightline.